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1/11 april 2004 STP55NE06 STP55NE06fp n-channel 60v - 0.019 ? - 55a to-220/to-220fp "single feature size?" power mosfet rev. 2 table 1. general features features summary typical r ds(on) = 0.019 ? exceptional dv/dt capability 100% avalanche tested low gate charge 100c high dv/dt capability application oriented characterization description this mosfet is the latest development of stmicro- electronics unique "single feature size" strip- based process. the resulting transistor shows ex- tremely high packing density for low onresis- tance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications dc motor control dc-dc & dc-ac converters synchronous rectification figure 1. package figure 2. internal schematic diagram table 2. order codes type v dss r ds(on) i d STP55NE06 60 v < 0.022 ? 55 a STP55NE06fp 60 v < 0.022 ? 30 a to-220 to-220fp 1 2 3 1 2 3 part number marking package packaging STP55NE06 p55ne06 to-220 tube STP55NE06fp p55ne06fp to-220fp tube
STP55NE06/fp 2/11 table 3. absolute maximum ratings note: 1. pulse width limited by safe operating area 2. i sd 55a, di/dt 300 a/ s, v dd v( br)dss , t j t jmax table 4. thermal data table 5. avalanche characteristics symbol parameter value unit STP55NE06 STP55NE06fp v ds drain-source voltage (v gs = 0) 60 v v dgr drain- gate voltage (r gs = 20 k ? )60v v gs gate-source voltage 20 v i d drain current (cont.) at t c = 25 c 55 30 a i d drain current (cont.) at t c = 100 c 39 21 a i dm (1) drain current (pulsed) 220 220 a p tot total dissipation at t c = 25 c 130 35 w derating factor 0.96 0.27 w/c dv/dt (2) peak diode recovery voltage slope 4.5 4.5 v/ns v iso insulation withstand voltage (dc) ? 2000 v t stg storage temperature -65 to 175 c t j max. operating junction temperature 175 c symbol parameter value unit to-220 to220-fp r thj-case thermal resistance junction-case max 1.15 4.28 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetit ive or not-repetitive (pulse width limited by t j max, < 1%) 55 a e as single pulse avalanche energy (starting t j = 25 c; i d = i ar : v dd = 25 v) 200 mj
3/11 STP55NE06/fp electrical characteristics (t case = 25c unless otherwise specified) table 6. off table 7. on (1) note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 % table 8. dynamic note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 % table 9. switching on table 10. switching off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a; v gs = 0 60 v i dss zero gate voltage v ds = max rating 1 a drain current (v gs = 0) v ds = max rating tc = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs ; i d = 250 a234v r ds(on) static drain-source on resistance v gs = 10v; i d = 27.5 a 0.019 0.022 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max ; i d = 27.5 a 25 35 s c iss input capacitance v ds = 25 v; f = 1 mhz; v gs = 0 3050 4000 pf c oss output capacitance 380 500 pf c rss reverse transfer capacitance 100 130 pf symbol parameter test conditions min. typ. max. unit td(on) turn-on time v dd = 30 v; i d = 27.5 a; r g = 4.7 ? 30 40 ns tr rise time v gs = 10 v (see test circuit, figure 18) 120 160 ns q g total gate charge v dd = 48 v; i d = 55 a; v gs = 10 v 80 105 nc q gs gate-source charge 13 nc q gd gate-drain charge 25 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 48 v; i d = 55 a; r g = 4.7 ? 20 30 ns t f fall time v gs = 10 v (see test circuit, figure 20) 50 70 ns t c cross-over time 75 100 ns
STP55NE06/fp 4/11 table 11. source drain diode note: 1. pulse width limited by safe operating area 2. pulsed: pulse duration = 300 s, duty cycle 1.5 % figure 3. safe operating area for to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220 figure 6. thermal impedance for to-220fp symbol parameter test conditions min. typ. max. unit i sd source-drain current 55 a i sdm (1) source-drain current (pulsed) 220 a v sd (2) forward on voltage i sd = 60 a; v gs = 0 1.5 v t rr reverse recovery time i sd = 55 a; di/dt = 100 a/ s v dd = 30 v; t j = 150 c (see test circuit, figure 20) 110 ns q rr reverse recoverycharge 430 c i rram reverse recoverycharge 7.5 a
5/11 STP55NE06/fp figure 7. output characteristics figure 8. transfer characteristics figure 9. transconductance figure 10. static drain-source on resistance figure 11. gate charge vs gate-source voltage figure 12. capacitance variations
STP55NE06/fp 6/11 figure 13. normalized gate thresold voltage vs temperature figure 14. normalized on resistance vs temperature figure 15. source-drain diode forward characteristics
7/11 STP55NE06/fp figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveforms figure 18. switching times test circuits for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times
STP55NE06/fp 8/11 package mechanical table 12. to-220 mechanical data figure 21. to-220 package dimensions note: drawing is not to scale. symbol millimeters inches min typ max min typ max a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116
9/11 STP55NE06/fp table 13. to-220fp mechanical data figure 22. to-220fp package dimensions note: drawing is not to scale. symbol millimeters inches min typ max min typ max a 4.40 4.60 0.173 0.181 b 2.50 2.70 0.098 0.106 c 1.00 1.30 0.039 0.051 d 2.50 2.75 0.098 0.108 e 0.40 0.70 0.016 0.027 f 0.75 1.00 0.030 0.039 f1 1.15 1.70 0.045 0.066 f2 1.15 1.70 0.045 0.066 g 4.95 5.20 0.195 0.204 g1 2.40 2.70 0.094 0.106 h 10.00 10.40 0.393 0.409 l2 16.00 0.630 l3 28.60 30.60 1.126 1.204 l4 9.80 10.60 0.385 0.417 l5 3.30 3.50 0.129 0.137 l6 15.90 16.40 0.626 0.645 l7 9.00 9.30 0.354 0.366 p 1.60 0.063 v5 5 v1 50 100 50 100 v2 44 46 44 46 ? 3.00 3.20 0.118 0.126 l3 h g g1 f v1 f f1 f2 p l4 l2 l5 a b c v v ? v l6 l7 v2 v v d e
STP55NE06/fp 10/11 revision history table 14. revision history date revision description of changes january-1998 1 first issue 14-apr-2004 2 stylesheet update. no content change.
11/11 STP55NE06/fp information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states www.st.com

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